MOEA, ITRI and UCLA to Collaborate on World-Leading Memory Technology Development

Key Facts

• To advance the development of next-generation MRAM, Industrial Technology Research Institute (ITRI) and University of California, Los Angeles (UCLA) have jointly signed a Voltage Control Magnetic RAM (VC-MRAM) cooperation project.
• ITRI and UCLA signed a VC-MRAM cooperation project aiming to accelerate the R&D of next-generation memory.
• According to the DoIT, the MOEA has long invested in the semiconductor industry and has encouraged ITRI in the R&D of Spin-Orbit Torque (SOT) MRAM technology.
• It has a solid foundation and R&D strengths in MRAM technology, and the two sides should be able to leverage their respective foundations through their cooperation, yielding even more groundbreaking achievements.

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